impact ionization
英 [ˈɪmpækt ˌaɪənaɪˈzeɪʃn]
美 [ˈɪmpækt ˌaɪənəˈzeɪʃn]
碰撞电离
双语例句
- Hot carriers refer to the carriers that have gained high kinetic energy after being accelerated by a strong electric field in areas of high field or by impact ionization.
热载流子，是由于沟道电场中加速以及碰撞离化产生的具有较大动能的载流子。 - Determination of 29 pesticide residues in tobacco by gas chromatography-electron impact ionization mass spectrometry
气相色谱-电子轰击离子源质谱法分析卷烟和烟叶中29种农药的残留 - A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。 - The distorted wave Born approximation with polarization and post-collisional interaction has been used to calculate the triple differential cross sections for low-energy electron impact ionization of the 3s orbital of argon in coplanar asymmetric geometry. The calculated results are compared with available experimental data.
用包含极化效应和后碰撞作用的扭曲波玻恩近似计算共面不对称几何条件下Ar3s的低能（e，2e）三重微分截面，并与实验进行比较。 - The transport process of neutral beam ions in HT-7 Tokamak was simulated by Monte-Carlo method. The neutral-plasma collision processes taken into account, which include the charge-exchange, electron impact ionization, ion impact ionization, etc.
应用MonteCarlo方法，模拟了Tokamak装置中的中性粒子的输运过程，模型考虑了中性粒子在等离子体中的电荷交换、电子碰撞电离、离子碰撞电离等离化过程。 - The Research about Impact Ionization and Breakdown under Gate of MOSFET
MOSFET栅下碰撞电离与击穿研究 - The electron impact ionization of hydrogen atoms from the 2s state is studied theoretically by extending the BBK model.
利用BBK模型对电子碰撞电离H（2s）过程进行理论研究，计算了对称和不对称几何条件下的三重微分截面。 - The R-V curve of photodiode was fit by "lucky electron" model. It verifies that due to plenty of photo-generated carrier occurred in the depletion region, photocurrent multiplication induced by electron impact ionization is the primary reason of decreasing reverse-bias differential resistance.
采用luckyelectron模型对器件的R-V曲线进行了拟合，结果证实器件反偏微分电阻下降的主要原因是由于pn结耗尽区光生载流子的激增，碰撞电离导致的光电倍增效应所引起。 - When the triggering light goes, the avalanche impact ionization and recombination radiation in the domain result in the formation of the carriers 'conductive channel in the body of the devices and control the current of the Lock-on switching.
当触发光脉冲消失后，单极电荷畴内雪崩电离和辐射复合在开关体内形成了载流子高导电通道，成为了载流子倍增的源泉，控制着Lock-on电流。 - The study of systematic law of electron impact ionization cross sections for H-like ions in ground and excited states
类氢离子基态、激发态的电子碰撞电离截面及系统学规律研究 - At that point, electric field is the strongest and impact ionization ratio is the highest.
该处电场最强，碰撞电离率最高。 - Its working principle and feasibility are analysed and proved by many theory such as electron impact ionization, equilibria system of high-energy particle beams and recombination properties of plasma produced.
运用电子碰撞电离、强流粒子束平衡体系理论方程与等离子复合特性等理论对这种新型X射线激光器的工作原理及其方案的可行性作了进一步的理论分析与探讨。 - A study on the role of impact ionization of deep level impurity in nonlinear photoconductive semiconductor switches
深能级杂质碰撞电离在非线性光导开关中的作用研究 - Based on our earlier paper, the triple differential cross section for electron impact ionization atomic helium are calculated by use of Coulomb waves with an effective charge for the initial channel wave function.
在前期工作的基础上，当初通道使用具有有效电荷库仑波时，完成了电子入射离化氦原子三重微分截面的理论推导。 - The effect of negative differential mobility and impact ionization on nonlinearity of GaAs photoconductive semiconductor switch
负微分迁移率和碰撞电离对GaAs光导开关非线性特性的影响 - Numerical Simulation and Analysis of Submicron MOSFET with Impact Ionization
考虑碰撞电离下的亚微米MOSFET的二维数值模拟和分析 - Monte Carlo simulation of the effect of impact ionization in thin-film electroluminescent devices
蒙特卡罗方法模拟薄膜电致发光器件中碰撞离化的作用 - The atomic processes of electron impact ionization and elastic scattering by plasma ions are included. The thermal and streaming motion of the ions along the magnetic field is also taken into consideration.
考虑了氦原子被电子碰撞电离，氦原子与等离子体离子之间的弹性散射等原子过程以及离子的热运动和沿磁力线的流动。 - For calculating integrals involving four confluent hypergeometric functions, a general theoretical method is presented, which is valid for both symmetric and asymmetric geometries to determine the triple differential cross sections ( TDCS) for electron impact ionization of ions.
解决了包含四个合流超几何函数的数值积分问题，从而给出了计算电子碰撞电离离子三重微分截面的通用方法，适合于中、高入射能量下的各种几何条件。 - With respect to the different mechanisms of carrier injection by the field, the authors take thermal emission and impact ionization into account, respectively.
根据电场注入载流子机理的不同，作者分别考虑了热发射和碰撞电离脱阱起作用下的一级捕获动力学方程。 - The leading edge emission is dominantly attributed to discrete luminescence caused by direct impact excitation and the trailing edge emission, and a part of leading edge emission are attributed to recombination luminescence caused by impact ionization and delocalization.
上升沿的发光主要是由直接碰撞激发引起的分立中心的发光，而下降沿的发光及上升沿的部分发光属于因电离而引起的复合发光。 - At the same time, the simulation results also show the field plate structure can effectively reduce electric field intensity and decrease impact ionization ratio under the gate. As a result, the breakdown voltage at that point increases.
模拟结果同时还说明了场板结构可以有效的降低栅下的电场强度，减低碰撞电离率，从而提高该处的击穿电压。 - The simulation results show that the negative differential resistance due to negative differential mobility of GaAs lead to electric field enhancing enough near cathode to give rise impact ionization.
计算表明GaAs材料的负微分迁移率引起的微分负阻，会导致阴极附近电场的动态增强，使得阴极附近的电场达到本征碰撞电离发生的阈值电场，从而引发本征碰撞电离的发生。 - This paper analyzes impact ionization models of super thin gate oxide breakdown, and gives a detailed description of hole breakdown theories. It lays the foundation for the deep study of super thin gate oxide breakdown theories and for the modeling of super thin gate oxide breakdown.
分析了超薄栅氧化层击穿的碰撞电离模型，并对空穴击穿机理进行了详细描述，为超薄栅氧化层的击穿机理的深入研究及超薄栅氧化层击穿模型的建立奠定了基础。 - We compute the triple differential cross section for electron impact ionization atomic helium using Coulomb waves with an effective charge for the incoming electron and find very agreement with experiment and with previous calculations.
当入射电子处在有效电荷库仑场的情形下，我们计算了电子入射离化氦原子的三重微分截面，并发现现有的理论计算与实验结果很好的一致。 - An accurate calculation for impact ionization cross sections of atoms by electron
原子的电子碰撞电离截面的高精度计算 - This structure can availably improve the mobility of electrons in the channels and also reduce impact ionization effects on the performance of InP HEMT.
采用这种双沟道结构能够有效地提高沟道中电子的迁移率，减小碰撞电离对HEMT性能的影响； - Included in the model were the physical mechanisms such as carrier-carrier scattering, SRH and Auger recombination, impact ionization and so on.
模型考虑了载流子间散射、SRH和俄歇复合、碰撞电离等物理效应。 - The impact ionization rate was theoretically derived for quantum well structure at high bias.
之后针对量子阱结构在高偏压下，可能产生的碰撞离化现象，从理论上推导了其碰撞离化率。 - This thesis presents a systematic and complete theoretical study on the electron impact ionization processes, which consists of electron-atom, by using the BBK method.
本论文的主要部分是用BBK方法对电子碰撞电离过程进行较为系统全面的理论研究。